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VISHAY
BY228/13.BY228/15
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
\
Features
* Glass passivated junction * Hermetically sealed package
Applications
High voltage rectification Efficiency diode in horizontal deflection circuits
Mechanical Data
Case: Sintered glass case, SOD 64 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 860 mg, (max. 1000 mg)
949588
Parts Table
Part BY228-13 BY228-15 Type differentiation VR = 1000 V; IFAV = 3 A VR = 1200 V; IFAV = 3 A SOD64 SOD64 Package
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Average forward current Junction temperature Storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A IR = 100 A IR = 100 A see electrical characteristics see electrical characteristics tp = 10 ms, half sinewave Test condition Sub type BY228/13 BY228/15 BY228/13 BY228/15 Symbol VRSM VRSM VR VR IFSM IFAV Tj Tstg ER Value 1300 1500 1000 1200 50 3 140 - 55 to + 175 10 Unit V V V V A A C C mJ
Maximum Thermal Resistance
Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition on PC board with spacing 25 mm Sub type Symbol RthJA Value 70 Unit K/W
Document Number 86004 Rev. 5, 07-Jan-03
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BY228/13.BY228/15
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current IF = 5 A VR = 1000 V VR = 1200 V VR = 1000 V, Tj = 140 C VR = 1200 V, Tj = 140 C Total reverse recovery time Reverse recovery time IF = 1 A, - diF/dt = 0.05 A/s IF = 0.5 A, IR = 1 A, iR = 0,25 A BY228-13 BY228-15 BY228-13 BY228/15 Test condition Sub type Symbol VF IR IR IR IR trr trr 2 2 Min Typ.
VISHAY
Max 1.5 5 5 140 140 20 2
Unit V A A A A s s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
R thJA - Therm. Resist. Junction / Ambient ( K/W )
40
3.5
I FAV - Average Forward Current ( A )
30
3.0 2.5 2.0 1.5 1.0 0.5 0.0 RthJA=70K/W PCB: d=25mm 0 30 60 90
VR=VRRM half sinewave RthJA=25K/W l=10mm
20 l 10 l
0 0 5 10 15
TL=constant 20 25 30
120
150
94 9081
l - Lead Length ( mm )
16403
Tamb - Ambient Temperature ( C )
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs. Ambient Temperature
100.000
IR - Reverse Current ( mA )
1000 VR = VRRM
I F - Forward Current ( A)
10.000 Tj=150C Tj=25C 1.000 0.100 0.010 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0
100
10
1 25
16404
50
75
100
125
150
16402
VF - Forward Voltage ( V )
Tj - Junction Temperature ( C )
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
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Document Number 86004 Rev. 5, 07-Jan-03
VISHAY
BY228/13.BY228/15
Vishay Semiconductors
PR - Reverse Power Dissipation ( mW )
350 VR = VRRM
CD - Diode Capacitance ( pF )
70 60 50 40 30 20 10 0 25 50 75 100 125 Tj - Junction Temperature ( C ) 150
16406
300 250 200 150 100 50 0 PR-Limit @80%VR PR-Limit @100%VR
f=1MHz
0.1
16405
1.0 10.0 VR - Reverse Voltage ( V )
100.0
Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm
Sintered Glass Case SOD 64 Weight max. 1.0g Cathode Identification 4.3 max.
technical drawings according to DIN specifications
1.35 max.
26 min.
4.2 max.
26 min.
94 9587
Document Number 86004 Rev. 5, 07-Jan-03
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BY228/13.BY228/15
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 86004 Rev. 5, 07-Jan-03

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